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. 2022 May 13;15(10):3508. doi: 10.3390/ma15103508

Figure 12.

Figure 12

The efficiency of four proposed structures, including a-Si:H passivating layers as a function of Eg and χ for doped layers with defects at the 0.2 eV level below Ec. (a) Contour graphs of the n-i-p structure with p-type wafer base. (b) Contour graphs of the n-i-p structure with n-type wafer base. (c) Contour graphs of the p-i-n structure with the p-type wafer. (d) Contour graphs of the p-i-n structure with n-type wafer base.