Table 1.

Parameters used in the simulation.

Parameters	c-p-Si	c-n-Si	i-Layer	p-Layer	n-Layer
Layer thickness (nm)	16 × 104	16 × 104	10	10	10
Dielectric constant	11.9	11.9	11.9	11.9	11.9
Electron affinity (eV)	4.05	4.05	3.8–4.2	3.8–4.2	3.8–4.2
Band gap (eV)	1.12	1.12	1.1–2.2	1.1–2.2	1.1–2.2
Effective conduction band density (cm−3)	2.8 × 1019	2.8 × 1019	1 × 1020	1 × 1020	1 × 1020
Effective valence band density (cm−3)	1.04 × 1019	1.04 × 1019	1 × 1020	1 × 1020	1 × 1020
Electron mobility (cm2 V−1 s−1)	1041	1041	20	20	20
Hole mobility (cm2 V−1 s−1)	418	418	5	5	5
Acceptor concentration (cm−3)	2 × 1017	0	0	1 × 1020	0
Donor concentration (cm−3)	0	2 × 1017	0	0	1 × 1020
Thermal velocity of electrons (cm s−1)	1 × 107	1 × 107	1 × 107	1 × 107	1 × 107
Thermal velocity of holes (cm s−1)	1 × 107	1 × 107	1 × 107	1 × 107	1 × 107
Layer density (g cm−3)	2.328	2.328	2.328	2.328	2.328
Auger recombination coefficient for electron (cm6 s−1)	2.2 × 10−31	2.2 × 10−31	0	0	0
Auger recombination coefficient for hole (cm6 s−1)	9.9 × 10−32	9.9 × 10−32	0	0	0
Direct band-to-band recombination coefficient (cm3 s−1)	0	0	0	0	0
Position of oxygen defect	EV + 0.55	EV + 0.55	-	-	-
Density of states (cm−3 eV−1)	1 × 1010	2.5 × 109	-	-	-
σe (σh) for single defect states	1 × 10−14 (1 × 10−14)	1 × 10−14 (1 × 10−14)	-	-	-