Figure 11.
The anisotropic silicon wet etching (side view). (A) Etching in the ˂100> direction is much faster than in the ˂111>direction. (B) An angle of 54.7° is observed between (100) and (111) surfaces. (C) Vertical walls are created with (110) wafers [134]. (Reprinted with permission from Ref. [134]. Copyright 2014 Elsevier).
