Figure 7.
Transmitted optical power for IR laser wavelengths (1550 nm) plotted against temperature. Thin films grown on c-plane sapphire (a), SiO2/Si (b), AT-cut quartz (c), GaN/AlGaN/GaN/Si (d) and muscovite (e) as they undergo metal-insulator transition (SMT). The transmitted optical power change, along with the beginning (red dots), mid (black dots, corresponding to maximum slope points in the curves), and end transition temperatures (red dots) are shown for all the samples.