Table 1.

Material parameters set in simulation.

Parameters	PFN:Br	$\mathbf{P}\mathbf{B}\mathbf{D}\mathbf{B}-\mathbf{T}:\mathbf{I}\mathbf{T}\mathbf{I}\mathbf{C}$	$\mathbf{P}\mathbf{T}\mathbf{B}7:\mathbf{P}\mathbf{C}71\mathbf{B}\mathbf{M}$	GO
Thickness (nm)	5 [36]	100 [36]	100 [36]	50 [36]
$\mathrm{Acceptor}\mathrm{Density}\left({\mathrm{cm}}^{-3}\right)$	0	0	0	${10}^{18}$ [37]
$\mathrm{Donor}\mathrm{Density}\left({\mathrm{cm}}^{-3}\right)$	$9\times {10}^{18}$ [36]	$0$	$0$	0
Effective Density of States for Valence Band (cm−3)	1019 [36]	1019 [36,37]	1019 [36,37]	2.2 × 1018 [40,41]
Effective Density of States for Conduction Band (cm−3)	1019 [36]	1019 [36,37]	1019 [36,37]	1.8 × 1018 [40,41]
Bandgap (eV)	2.8 [50]	1.2 [37]	1.1 [51]	2.48 [40,41]
Relative Dielectric Permittivity	5 [36]	3.65 [36]	3.9 [52]	10 [40,41]
Mobility of Electron (cm2/Vs)	2 × 10−6 [37]	3.1 × 10−4 [36,37]	5 × 10−4 [52]	$26$ [40,41]
Mobility of Hole (cm2/Vs)	1 × 10−4 [37,50]	3.2 × 10−4 [36,37]	5 × 10−4 [52]	123 [40,41]
Electron Affinity (eV)	4 [36]	4.03 [36,37]	3.7 [52]	2.3 [40,41]
$\mathrm{Defect}\mathrm{Density}\left({\mathrm{cm}}^{-3}\right)$	${10}^9$ [37,50]	${10}^{12}$ [36,37]	${10}^{12}$ [36,37]	${10}^9$ [27]