Table 2.

Device parameters set in the simulation.

Interface Defect Density [36]
IL1 (ETL/Active Layer) Defect Density IL2 (Active Layer/HTL) Defect Density	$2\times {10}^9 {\mathrm{cm}}^{-2}$ $2\times {10}^9 {\mathrm{cm}}^{-2}$
Back Metal Contact Properties [54,55]
The electron work function of Au Surface recombination velocity of electron Surface recombination velocity of hole	−5.1 eV ${10}^5\mathrm{cm}/\mathrm{s}$ ${10}^7\mathrm{cm}/\mathrm{s}$
Front Metal Contact Properties [54,55]
The electron work function of TCO Surface recombination velocity of electron Surface recombination velocity of hole	−4.4 eV ${10}^7\mathrm{cm}/\mathrm{s}$ 105 cm/s