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. 2022 Jun 2;13:3076. doi: 10.1038/s41467-022-30801-x

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© The Author(s) 2022

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 2 — a Device configuration for the measurement of transistor transfer and output characteristics. b Device configuration for the measurement of the gate voltage modulated Seebeck coefficient. The gradient arrow indicates the direction of the positive temperature difference. c Transistor transfer characteristics in both the linear regime and the saturation regime over time. The dotted lines are the gate leakage currents in the dielectric. d Transistor output characteristics over time. e Gate voltage modulated Seebeck coefficient measured over time in ambient air, in which the error bars arise from the linear fit of the thermal voltage to the applied temperature differential (See Supplementary Information Section 5).