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. 2022 Jun 2;13:3076. doi: 10.1038/s41467-022-30801-x

Fig. 3. Parametric dependence of mobility and Seebeck coefficient on time.

Fig. 3

a Output characteristics around VD = 0 V for low gate voltage of VG = –10 V. b Output characteristics for intermediate drain voltages VD = 0 V to VD = –10 V, high gate voltage of VG = –30 V, and for up to one day in ambient air. c Output characteristics for intermediate drain voltages VD = 0 V to VD = –10 V, high gate voltage of VG = –30 V, and for between 2 days and a month in ambient air. (d) Time evolution of the saturation mobility in the transistor. e Time evolution of the Seebeck coefficient in the transistor channel. f Parametric dependence of saturation mobility and Seebeck coefficient on time over three temporal decades in hours (g) Seebeck coefficient vs. carrier density in the transistor. h Time evolution in the slope of the Seebeck coefficient vs. carrier density in the transistor channel.