TABLE 1.
Performance yield of photodetectors based on different 2D materials.
| Device type | Photoresponsivity | Photo-detectivity | Photo-response time | Operational Wavelength | Rise time/fall time |
|---|---|---|---|---|---|
| Monolayer MoS2 Photodetector (Yin et al., 2012) | 7.5 mAW−1 | ---- | 50 ms | 670 nm | ---- |
| WSe2/Graphene/MoS2 photodetector (Pham et al., 2022) | 104 AW−1 | ---- | ---- | 0.94 µm | 53.6 µs/30.3 µs |
| Graphene-ZnO photodetector (Pham et al., 2022) | ---- | 3.9 × 1013 jones | ---- | 0.39 µm | ---- |
| Graphene-GaN photodetector (Pham et al., 2022) | 10–3 AW−1 | ---- | ---- | 0.35 µm | ---- |
| Graphene- WS2- Graphene (Pham et al., 2022) | 3.5 AW-1 | 1011 jones | ---- | 0.532 µm | ---- |
| hBN- Graphene- WS2- Graphene- hBN (Pham et al., 2022) | ---- | ---- | ---- | 0.759 µm | Rise time; 5.5 ps |
| Ultra-Sensitive Monolayer MoS2 Photodetector (Lopez-Sanchez et al., 2013) | 880 AW−1 | ---- | 0.6 s | 561 nm | 4 s/9 s |
| Ultrasensitive multilayered MoSe2 back-gated FET device (Abderrahmane et al., 2014) | 97.1 AW−1 | ---- | 15 ms | 532 nm | 15 ms/30 ms |
| MoS2 monolayer phototransistor by CVD fabrication method (Zhang et al., 2013a) | 2.2 × 103 AW−1 | ---- | ---- | 532 nm | ---- |
| Graphene—MoS2 (Pham et al., 2022) | 1.26 AW-1 | 4.2 × 1010 jones | ---- | 1.44 µm | ---- |
| MoTe2 –Graphene based Vis-IR photodetectors (Pham et al., 2022) | 970.82 AW-1 | 1.5 × 1011 jones | ---- | 1.064 µm | Rise time; 78 ms |
| Few-Layer WS2 Phototransistor (Perea ‐ López et al., 2013) | 92 μAW−1 | ---- | 5 ms | 457–647 nm | ---- |
| Graphene- ZnO photodetectors (Pham et al., 2022) | 3 × 104 AW−1 | 4.3 × 1014 jones | ---- | 0.365 µm | ---- |
| WSe2 Monolayer Phototransistor (Zhang et al., 2014b) | 1.8 × 105 AW−1 | 1014 jones | Less than 23 ms | 650 nm | ---- |
| ReSe2 nanosheet transistor (Yang et al., 2014) | 95 AW−1 | ---- | ---- | 633 nm | ∼68 ms/34 ms |
| Silicene/MoS2 heterostructure (Kharadi et al., 2021) | 5.66 × 105 AW−1 | 4.7 × 1010 jones | ---- | 650 nm | ---- |
| Graphene/Carbon nanotube photodetectors (Pham et al., 2022) | 100 AW-1 | ---- | ---- | 0.4–1.55 µm | Rise time; 10–4 s |
| Graphene/ZnO nanorods (Pham et al., 2022) | 3 × 105 AW−1 | ---- | ---- | 0.365 µm | ---- |
| GaSe- MoS2 UV self-driven photodetectors (Pham et al., 2022) | 0.9 AW-1 | ---- | 5 ms | 0.45 µm | ---- |
| Graphene single-wall nanotubes (Pham et al., 2022) | 100 AW-1 | ---- | ---- | 0.65 µm | ---- |
| Graphene—MoS2 photodetector (Pham et al., 2022) | > 107 AW−1 | ---- | ---- | ---- | ---- |
| Graphene—InSe photodetector (Pham et al., 2022) | 105 AW−1 | ---- | ---- | 0.633 µm | ---- |
| ReS2-Graphene photodetectors (Pham et al., 2022) | 7 × 105 AW−1 | 1.9 × 1013 jones | ---- | 0.55 µm | Rise time; <30 ms |
| WS2-PbS Vis NIR photodetectors (Pham et al., 2022) | 14 AW-1 | ---- | ---- | 0.808 µm | 153 µs/226 µs |
| MoS2 -PbS photodetectors (Pham et al., 2022) | 5.4 × 104 AW−1 | 1011 jones | ---- | 0.85 µm | Rise time; 950 µs |
| Mono-multi MoS2 heterojunction Vis-NIR photodetectors (Pham et al., 2022) | 1.65 × 104 AW−1 | ---- | ---- | 1.064 µm | 1.5 ms/2.5 ms |
| In- Graphene- WS2- graphene Vis-NIR photodetectors (Pham et al., 2022) | 2.6 × 103 AW−1 | 2.2 × 1012 jones | ---- | 0.52 µm | 40 µs/65 µs |
| GaSe- WS2 UV-Vis photodetector (Pham et al., 2022) | ∼149 AW-1 | ---- | ---- | 0.41 µm | 37 µs/43 µs |
| WSe2- SnSe2 Vis-IR photodetectors (Pham et al., 2022) | 80 AW-1 | 1.4 × 1010 jones | ---- | 1.55 µm | ---- |
| ZnS- MoS2 UV-Vis-IR photodetectors (Pham et al., 2022) | 9.4 × 10–6 AW−1 | ---- | ---- | 0.365 µm | Rise time; 22 s |
| PtSe2- GaN UV photodetectors (Pham et al., 2022) | 0.193 AW-1 | 1014 jones | ---- | 0.265 µm | 45 µs/102 µs |