Fig. 3. DC tuning properties of Mie-based modulators.

a, b and d, e Experimental transmission results are compared to simulated transmission curves for various geometries of electro-optic modulators based on quasi-BIC structures. We find, as expected, by experiment and simulation, that the geometrical scaling factor α shifts the resonances within the telecom band. In addition, the asymmetry angle θ influences the linewidth of the resonances. c, f are DC tuning maps of the electro-optic modulators for (α, θ) = (0.7, 25°) and (α, θ) = (0.725, 15°), respectively. Insets show three distinct curves at 0 V, and V_switch = ± 100 V and ± 60 V, respectively. g Experimentally extracted quality factors for two distinct heights of the silicon dioxide pedestal are compared and we find that an increase in height from 200 to 300 nm leads to an increase in the quality factor. Dashed circles represent quasi-BIC structures with θ = 15° and full contour circles represent θ = 25°. The circles for h_SiO2 = 300 nm denote the measurements as labeled to the right of the circles. The circles for h_SiO2 = 200 nm represent measurements of equivalent structures with h_SiO2 = 200 nm. h Detailed voltage-dependent transmission curves are reported for two exemplary operating wavelengths for the case of the two device geometries discussed in a, d. Full switching of transmission is achieved for both geometries. i, j In contrast, GMRs in the same structure have much broader linewidths, demonstrated by experiment and simulation. k Their resonance wavelength can be tuned over $\mathrm{\Delta }{\lambda }_{\mathrm{res}}=20$nm. Q factors and asymmetry angle θ are indicated for all colormaps. ER extinction ratio.