Table 1.

2D material-based non-volatile memory devices and their performance

Active layer (thickness)/year	Current switching ratio	Set voltage [V]	Retention	Endurance in cycles	Ref./Year
Graphite [2008]	1.5 × 107	4–6	2 weeks	> 103	[209]
Graphene (1–2 L) [2008]	102	~ 6	24 h	> 105	[210]
Graphitic stripes (~ 10 nm) [2009]	107	3–4	–	2.2 × 104	[211]
GO thin film (~ 30 nm) [2009]	20	0.3–1	104 s	> 100	[212]
GO thin film (~ 15 nm) [2010]	103	2.5	105 s	> 100	[213]
GO (~ 30 nm) [2010]	103	1.6	107 s	100	[214]
GO thin film (50–100 nm) [2011]	103	0.7	–	–	[215]
RGO thin film (20 nm) [2011]	105	7.5	103 s	> 100	[216]
Graphene (1 L) [2012]	106	7	104 s	–	[217]
rGO-ferrocene film (~ 50 nm) [2012]	103	2	103 s	> 103	[218]
RGO-Au [2011]	2	5	103 s	> 20	[219]
MoS₂–PVP (70 nm) [2012]	102	3.5	–	–	[220]
PtAg–MoS₂ nanobelts in PVP [2014]	–	5	DRAM	–	[221]
MoS₂/GO hybrid film (~ 100 nm) [2013]	102	1.2	–	–	[222]
GO/MoS₂/GO (total ~ 20 nm) [2016]	104	4	104	102	[223]
MoS₂–PMMA [2017]	102–103	2	105	105	[224]
MoS₂–PVA [2016]	102	3	104	103	[225]
MoOx/MoS₂ (50–600 nm) [2015]	106	0.1–0.2	104	104	[226]
1 T-MoS₂ film (~ 550 nm) [2016]	103	0.1	–	103	[227]
CVD MoS₂ (~ 1 L) [2015]	103	8.3	120	–	[228]
CVD h-BN (~ 3 nm) [2016]	102	0.72	3 × 103	550	[229]
CVD h-BN (5–7 L) [2017]	10	0.4	–	> 350	[230]
BP (~ 3 µm) [2015]	3 × 105	1.5–2	105	–	[231]
p-type Si (bulk) [2010]	7.5	–	–	–	[232]
p-type Si (bulk) [2011]	16.8	–	10 years	–	[233]
Graphene (1 L) [2013]	20	2	1200 s	> 100	[234]