Table 1.

Deposition conditions of the films presented in this work

	PRF	p	TS	SiH4	GeH4	CH4	Sn(CH3)4	H2	CO2
	[mW·cm−2)	[mbar]	[°C]	(sccm)	(sccm)	(sccm)	(duty cycle (‐))	(sccm)	(sccm)
SiC:H	20.8	3.6	180	5		10		200
SiO:H	20.8	3.6	180	5				200	5
a‐Si:H‐1 a)	69.3	9	130	1.5–5				200
a‐Si:H‐2 a)	18–20.8	0.7	130–180	40
nc‐Si:H b)	277.8	4	180	3.3				120
SiGe:H	13.9–56	2–6	150–210	30	0.4–5.3			150‐200
GeO:H	20.8	3.6	180		2–4			200	20‐70
GeC:H	20.8	3.6	180		2	20–60		200
Ge:H	12.4–248.7	0.5–6	200–350		0.5–2			100‐200
GeCSn:H	14.9–29.8	1–5	210–290		1–2		20–12000	200
best a‐Ge:H	14.9	4	290		2			200
best nc‐Ge:H	24.8	1	290		1			200

^a)No distinction is made between the two sets of conditions in the following figures;

^b)Processed at 40 MHz.