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. 2022 Jun 20;27(12):3951. doi: 10.3390/molecules27123951

Figure 3.

Figure 3

AFM images of MIM capacitors deposited with 25 nm Al2O3, TiO2, and HfO2 dielectric material, respectively. (a) ALD deposition of Al2O3 dielectric material. (b) ALD deposition of TiO2 dielectric material. (c) ALD deposition of HfO2 dielectric material. (d) The linear contour fluctuations in the directions are indicated by the black, red, and blue lines in Figure 3a–c.