Table 2.
Methodologies for production of metalens in diameter over 4 mm
| Fabrication methodology | Minimal size; height | Metalens diameter | Operating wavelength of the metalens | Constituent/substrate | Ref. | ||
|---|---|---|---|---|---|---|---|
| Sim. | Exp. | ||||||
| Electron-beam lithography | 170 nm; 695 nm | 100 μm | 1 cm | 633 nm (VIS) | Si3N4/SiO2 | 46 | |
| 100 nm; 2 μm | – | 1 cm | 447, 532, 660 nm (VIS) | Exposed resist/glass | 227 | ||
| 105 nm; 400 nm | 60 μm | 5 mm | 532 nm (VIS) | Si3N4/SiO2 | 194 | ||
| Photolithography | 193-nm immersion | 150 nm; 400 nm | 20 μm | 8 mm | 940 nm (NIR) | a-Si/SiO2 | 208 |
| 365-nm stepper | 830 nm; 600 nm | 100 μm | 2 cm | 1550 nm (NIR) | a-Si/SiO2 | 54 | |
| 365-nm stepper | 810 nm; 950 nm | – | 6 mm | 1550 nm (NIR) | a-Si//SWCNT | 53 | |
| DUV stepper | 500 nm; 2 μm | – | 1 cm | 1550 nm (NIR) | SiN/Si | 131 | |
| DUV stepper | 250 nm; 2 μm | 50 μm | 1 cm | 633 nm (VIS) | SiO2/SiO2 | 147 | |
| 248-nm stepper (LDW-fabricated reticle) | 250 nm; 2 μm | 500 μm | 1 cm | 633 nm (VIS) | SiO2/SiO2 | 204 | |
| UV LDW | 2 μm; 10 μm | – | 1 cm | 10.6 μm (MIR) | Si/Si | 127 | |
| UV projection (LDW-fabricated reticle) | 1.5 μm; 6.8 μm | – | 1.2 cm | 10.6 μm (MIR) | Si/Si | 228 | |
| Nanoimprint lithography | EBL-fabricated master mold | 60 nm; 100 nm | – | 2 cm | 473, 532, 660 nm (VIS) | Poly-Si/SiO2 | 62 |
| EBL-fabricated master mold | 260 nm; 1.2 μm | – | 4 mm | 940 nm (NIR) | a-Si/Si | 210 | |
| EBL-fabricated master mold | 57 nm; 478 nm | 300 μm | 4 mm | 550 nm (VIS) | TiO2/SiO2 | 211 | |