Table 3. Parameters of ETL and HTL.
| parameter/layer | TiO2(ETL) | perovskite (absorber) | Cu2O(HTL) |
|---|---|---|---|
| layer thickness (nm) | 150 | 350 (static) | 150 |
| relative permittivity (εr) | 9 | 7–11 | 7.11 |
| bandgap energy (eV) | 3.2 | 1.5–1.7 | 2.17 |
| electron affinity (eV) | 4.26 | 4.15–4.30 | 3.2 |
| mobility of electron (cm2/V.s) | 20 | 20–100 | 200 |
| mobility of hole (cm2/V.s) | 10 | 20–100 | 80 |
| donor level concentration (Nd) (cm–3) | 1.0 × 1016 | 1.0 × 109 (static) | 0 |
| acceptor level concentration (Na) (cm–3) | 0 | 1.0 × 109 (static) | 1.0 × 1018 |
| conduction band DoS (Nc) (cm–3) | 2.2 × 1018 | 2.0 × 1018–1.0 × 1019 | 2.02 × 1017 |
| valence band DoS (Nv) (cm–3) | 1.8 × 1018 | 2.0 × 1018–1.0 × 1019 | 1.1 × 1019 |
| radiative recombination (cm3/s) | 2.3 × 10–9 | 2.3 × 10–9 (static) | 2.3 × 10–9 |