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. 2022 Jul 8;13:3976. doi: 10.1038/s41467-022-31699-1

Fig. 4. Selective etching of Pb4S3Cl2/CsPbCl3 heterostructures.

Fig. 4

a Scheme of the DMF-assisted etching procedure developed to transform the Pb4S3Cl2/CsPbCl3 heterostructures into Pb4S3Cl2 NCs in the presence of surfactants (R-NH2 = oleylamine, R-COOH = oleic acid). The cyan cubes and the orange spheres represent the CsPbCl3 and the Pb4S3Cl2 domains of the heterostructures, respectively. b TEM image of the starting heterostructures. The top inset shows an HAADF-STEM image of one heterostructure prior to the etching, while the bottom inset shows the FFT of the chalcohalide domain of the same image. c TEM image of the etched NCs. The top inset shows an HAADF-STEM image of one NC after the etching, while the bottom inset shows the FFT of the same image. The two FFTs demonstrate that the Pb4S3Cl2 domains retain the same crystal structure before and after the etching procedure.