Table 1.

Physical parameters of n-ZnSe/p-Sb₂Se₃/p⁺-AgInTe₂ dual-heterojunction solar cell used in this simulation.

Parameters	ITO (Ahmmed et al., 2020)	n-ZnSe (Olopade et al., 2012; Samantilleke et al., 1998)	p-Sb2Se3 (Z. Q. Li et al., 2019)	p+-AgInTe2 (Benseddik et al., 2020; El-Korashy et al., 1999; Yang et al., 2017)
Layer type	Substrate	Window	Absorber	BSF
aThickness [μm]	0.05	0.1	1.0	0.5
Band gap, $E_g$ [eV]	3.6	2.7	1.2	1.16
Electron affinity, χ [eV]	4.5	4.09	4.04	3.6
Dielectric permittivity, ε [relative]	8.9	10	18	8.9
Effective CB density, NC [cm−3]	2.2×1018	1.5×1018	2.2×1018	3.66×1019
Effective VB density, NV [cm−3]	1.8×1019	1.8×1019	1.8×1019	1.35×1019
Electron mobility, ${\mu }_n$ [cm2 V−1 s−1]	50	50	15	1011
Hole mobility, ${\mu }_p$ [cm2 V−1 s−1]	10	20	5.1	887
aDonor concentration, ND [cm−3]	1.0×1021	1.0×1018	0	0
aAcceptor concentration, NA [cm−3]	1.0×107	0	1.0×1015	3.5×1019
Defect type	Acceptor	Acceptor	Donor	Neutral/Donor
Energetic distribution	Gaussian	Gaussian	Gaussian	Gaussian
Reference for defect energy level, Et	Above the highest EV	Above the highest EV	Above the highest EV	Above the highest EV
Energy with respect to Reference [eV]	1.8	1.35	0.6	0.58
aPeak defect density, N(t) [eV−1 cm−3]	1.0×1014	1.0×1013	1.0×1013	1.0×1013
Characteristic energy [eV]	0.1	0.1	0.1	0.1
Electron capture cross section for defect [cm2]	10−15	10−15	10−15	10−15
Hole capture cross section for defect [cm2]	10−15	10−15	10−17	10−15

^a)is a variable field.