Table 2.
Parameters | ZnSe/Sb2Se3 interface | Sb2Se3/AgInTe2 interface |
---|---|---|
Defect type | Neutral | Neutral |
Capture cross section for electrons [cm2] | 10−19 | 10−19 |
Capture cross section for holes [cm2] | 10−19 | 10−19 |
Energetic distribution | Single | Single |
Reference for defect energy level, Et | Above the highest EV | Above the highest EV |
Energy with respect to reference (eV) | 0.6 | 0.6 |
Total defects (cm−2) | 1010 | 1010 |