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. 2022 Jul 18;13:4149. doi: 10.1038/s41467-022-31886-0

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© The Author(s) 2022

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 4 — a Four-probe conductivity as a function of Vg for OHVPD-WS₂ monolayer device on the 300 nm SiO_x substrate at different temperatures. Insect shows the device structure. (Scale bar: 5 μm) b Field-effect mobility as a function of temperature for OHVPD- and CVD-WS₂ monolayers. c Comparison of mobility distribution for our OHVPD-WS₂ results (orange), mechanical exfoliation WS₂ monolayers (ME, green), and conventional CVD-WS₂ (cyan) from literatures. d FET transfer curve of an OHVPD-WS₂ monolayer for the short channel device (L_CH = 100 nm).