Table 1. FET Characteristics of CxDMS-BP and CxDMS-CuBP (x = 4, 8, 12, or 16).
| compound | μh (cm2 V–1 s–1)a | Vth (V)b | Ion/Ioffc | compound | μh (cm2 V–1 s–1)a | Vth (V)b | Ion/Ioffc |
|---|---|---|---|---|---|---|---|
| C4DMS-BP | 0.12 (0.098 ± 0.021) | –3.0 | 1.8 × 104 | C4DMS-CuBP | 0.034 (0.014 ± 0.008) | –7.5 | 1.9 × 104 |
| C8DMS-BP | 2.7 (2.5 ± 0.3) | –7.3 | 3.6 × 105 | C8DMS-CuBP | 4.1 (3.3 ± 0.7) | –4.3 | 1.8 × 105 |
| C12DMS-BP | 3.4 (2.1 ± 0.7) | –5.1 | 2.1 × 104 | C12DMS-CuBP | 4.1 (2.8 ± 0.9) | –1.6 | 7.9 × 104 |
| C16DMS-BP | 2.3 (1.8 ± 0.3) | 4.9 | 1.7 × 104 | C16DMS-CuBP | 3.0 (2.0 ± 0.5) | 5.9 | 1.6 × 104 |
a
Hole mobility of the best-performing device followed by an average of eight devices in parentheses.
b
Threshold voltage of the best-performing device.
c
On–off current ratio of the best-performing device determined from the ID–VG curve.