Table 2.

Interface values are employed in the device simulation.

Parameters	Spiro-OMeTAD/SnS Interface	CeO2/SnS Interface
Defect type	Neutral	Neutral
Capture cross-section electrons (cm2)	1 × 10−19	1 × 10−19
Capture cross-section holes (cm2)	1 × 10−19	1 × 10−19
Defect energy level Et	Above the highest Ev	Above the highest Ev
Energy with respect to a reference (eV)	0.06	0.06
Total density (cm−2)	1 × 1010	1 × 1010