Table 3.
Comparison of physical parameters of various simulated and experimentally studied device structures.
| Structures | VOC V |
JSC mA/cm2 |
FF % |
PCE % |
References |
|---|---|---|---|---|---|
| SnS/Zn(O,S) (experimentally) |
0.244 | 19.42 | 42.97 | 2.04 | [19] |
| SnS/SnO2/Zn(O,S):N/ZnO (experimentally) |
0.372 | 20.20 | 58.00 | 4.36 | [4] |
| CZTS/SnS2/ZnO (simulated) |
0.7178 | 26.99 | 65.67 | 12.73 | [25] |
| Mo/SnS/CZTS/SnS2/ZnO (simulated) |
0.9922 | 20.13 | 71.33 | 14.24 | [26] |
| ZnO/CdS/CdTe/SnS/Ni (simulated) |
0.845 | 26.46 | 84.50 | 21.83 | [27] |
| p-SnS/CdS/n-Zn MgO (simulated) |
~0.7 | 38.54 | 83 | ~23 | [28] |
| ITO/CeO2/SnS/NiO/Mo (simulated) |
0.890 | 32.67 | 86.19 | 25.06 | [29] |
| ITO/CeO2/SnS/Spiro-OMeTAD (simulated) |
0.887 | 33.74 | 85.61 | 25.65 | This paper |