Table 3.

Comparison of reported parameters for switching ultrasound ASICs.

Parameter	First-generation module	Second-generation module	[42]	MPS MP4816 [43]	Supertex HV2761 [41]	Maxim MAX4805 [52]
Matrix	5 × 8	5 × 8	64 × 1	16 × 1	24 × 1	8 × 1
ASIC process	0.35 μm	0.35 μm	0.35 μm	—	—	BiCMOS
Max VTX	38 Vpp	38 Vpp	50 Vpp	180 Vpp	200 Vpp	200 Vpp
TX Sw Ron	900 Ω	330 Ω	180 Ω	12.5 Ω	20 Ω	1.5 Ω
Glitch – XDCR	5 mVpp	0.3 mVpp	—	—	—	—
Glitch – 50 Ω	— 3	— 3	—	30 mVpp	300 mVpp	—
Off-isolation – XDCR	-46 dB	-46 dB	-17 dB	—	-30 dB	—
Off-isolation – 50 Ω	—	—	—	-66 dB	-60 dB	—
Cparasitic	1.5 pF	5 pF	—	11 pF	30 pF	3.5 pF
Receive bandwidth	4 MHz	10 MHz	70 MHz	45 MHz	—	44 MHz
Die/package	3.7 mm × 1.8 mm	4.5 mm × 1.9 mm	6 mm × 1.6 mm	7 mm × 7 mm	9 mm × 9 mm	5 mm × 5 mm
Power/channel	77 mW	24 mW2	—	63 μW1	1.7 mW1	8.5 mW

¹OEM switching power calculated for 64 switch events in 32 ms. ²Current second-generation modules use +/-5 V for preamp supplies as opposed to the manufacturer suggested +/-2 V which makes the power greater than it should be. This will be corrected in future work. ³ASIC switch parameters for off-isolation and glitch level are not designed for 50 Ω operation and therefore were not measured with 50 Ω load.