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. Author manuscript; available in PMC: 2022 Aug 9.
Published in final edited form as: J Vis Exp. 2019 Sep 28;(151):10.3791/60334. doi: 10.3791/60334

Table 1: Example SU8 wafer fabrication protocol.

Silicon wafers used to generate PDMS stamps and subsequent stencils were fabricated using the steps outlined in this table. This protocol was generated using the SU8 3000 data sheet with the aim of creating a film thickness of approximately 100–250 μm.

Example SU8 Wafer Fabrication
1. Spin coat wafer with SU8–3050 Spin at 1,000 RPM for 30 s
2. Soft bake wafer on hot plate i. 3 min at 65 °C
ii. 45 min at 95 °C
iii. 3 min at 65 °C
iv. Cool to room temperature
3. Expose in mask aligner i.Align wafer and photomask in mask aligner
ii.Expose with energy of 250 mJ/cm2
• E.g. for lamp with intensity of 11 mW/cm2, expose for 23 s
4. Post exposure bake on hot plate i. 1 min at 65 °C
ii.15 min at 95 °C
iii. 1 min at 65 °C
iv. Cool to room temperature
5. Develop i. Agitate in SU8 Developer, approx. 5–10 min
ii.Check development with isopropyl alcohol (IPA)
• If under-developed, IPA rinse will produce a white residue
6. Hard bake on hot plate (optional) 1–2 h at 150 °C