1. Spin coat wafer with SU8–3050 |
Spin at 1,000 RPM for 30 s |
2. Soft bake wafer on hot plate |
i. 3 min at 65 °C |
ii. 45 min at 95 °C |
iii. 3 min at 65 °C |
iv. Cool to room temperature |
3. Expose in mask aligner |
i.Align wafer and photomask in mask aligner |
ii.Expose with energy of 250 mJ/cm2
|
• E.g. for lamp with intensity of 11 mW/cm2, expose for 23 s |
4. Post exposure bake on hot plate |
i. 1 min at 65 °C |
ii.15 min at 95 °C |
iii. 1 min at 65 °C |
iv. Cool to room temperature |
5. Develop |
i. Agitate in SU8 Developer, approx. 5–10 min |
ii.Check development with isopropyl alcohol (IPA) |
• If under-developed, IPA rinse will produce a white residue |
6. Hard bake on hot plate (optional) |
1–2 h at 150 °C |