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. 2022 Aug 8;13:4625. doi: 10.1038/s41467-022-32242-y

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© The Author(s) 2022

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 3 — a Temperature dependence of the sheet resistance of sample C for different values of the back-gate voltage in the range −40 to 200 V. b Normalized sheet resistance in color scale as a function of the carrier density extracted from Hall measurements and temperature. The dashed line indicates the critical temperature defined by an 80% drop of the resistance with respect to the normal resistance R_N at T = 0.9 K. c Sheet resistance at 0.9 K as a function of the back-gate voltage.