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. 2022 Jul 28;12(15):2593. doi: 10.3390/nano12152593

Figure 12.

Figure 12

Current values measured after each RESET (HRS points) and SET (LRS points) processes at 0.1 V in TiN/HfO2-Fe2O3/Ti devices containing (a) 500 and (b) 200 ALD cycles of HfO2, (c) three-layer stack with Fe2O3 layer grown in between HfO2 films, and (d) periodically laminated media grown using the same cycle numbers for HfO2 and Fe2O3. The deposition cycle sequences are indicated by labels.