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. 2022 Aug 12;15(16):5542. doi: 10.3390/ma15165542

Figure 20.

Figure 20

The Arrhenius law approximation ranges for silicon implanted with neon Ne+ ions of energy E = 100 keV (a) P-type silicon doped with boron, ρ = 0.4 Ω·cm, D = 2.2 × 1014 cm−2, ΔE = 0.46 eV. (b) N-type silicon doped with phosphorus, ρ = 10 Ω·cm, D = 4.0 × 1014 cm−2, ΔE = 0.23 eV [86,87].