Table 1.

Determination of intermediate energy levels for boron and phosphorus doped silicon samples implanted with Ne⁺ ions and energy E = 100 keV, isochronically annealed at 598 K [86,87].

Sample	Label	Resistivity	Dose	Activation Energy
Silicon solar cells (p-type) doped with boron	Si+B1	ρ = 0.4 Ω·cm	D = 4.0 × 1013 cm−2	ΔE1 = 0.34 eV
Silicon solar cells (p-type) doped with boron	Si+B2	ρ = 0.4 Ω·cm	D = 2.2 × 1014 cm−2	ΔE2 = 0.46 eV
Silicon solar cells (p-type) doped with boron	Si+B3	ρ = 0.4 Ω·cm	D = 4.0 × 1014 cm−2	ΔE3 = 0.32 eV
Silicon solar cells (n-type) doped with phosphorus	Si+P1	ρ = 10 Ω·cm	D = 4.0 × 1013 cm−2	ΔE4 = 0.19 eV
Silicon solar cells (n-type) doped with phosphorus	Si+P2	ρ = 10 Ω·cm	D = 4.0 × 1014 cm−2	ΔE5 = 0.23 eV