State-of-art excellent examples of printed planar TEG devices.

Materials	S 2 σ, μW cm−1 K−2	Element number	P max at various ΔT	V oc at various ΔT	Thickness of elements	Bending radius	Bending times/increase percentage of resistance
This work	3.2–4.6	6	20 K: 1.72 μW	20 K: 14 mV	40 μm	5 mm	1000 cycles/2%
			60 K: 15.22 μW	60 K: 45 mV
Bi2Te2.8Se0.2 film11	4.68	5	20 K: 0.4 μW	20 K: 12 mV	10 μm	7 mm	150 cycles/1.4%
			60 K: 6.1 μW	60 K: 41 mV
Bi2Te3 film9	2–3.4	62	20 K: 25 μW	20 K: 210 mV	120 μm	—	—
Carbon nanotube1	15	3 p–n couples	27.5 K: 2.51 μW	27.5 K: 11 mV	150 μm	—	—
WS2 (n-type)	WS2: 0.05	3 p–n couples	60 K: 2.58 nW	60 K: 13 mV	100 nm	—	—
NbSe2 (p-type)4	NbSe2: 0.26
RGO/Bi2Te3(n-type) and SWCNTs/Sb2Te3 (p-type)43	RGO/Bi2Te3: 1.08	10 couples	70 K: 23.6 μW	70 K: 135 mV	25–30 μm	1.8 mm	800 cycles/25%
	SWCNTs/Sb2Te3: 0.5
PEDOT-Tos/TTF-TCNQ46	3.24	54	10 K: 0.128 μW	—	3–30 μm	—	—
PEDOT:PSS47	2.84	16	10 K: 10.59 nW	10 K: 12.75 mV	1.1 mm	—	—
CNT/P3HT48	3.25	41	10 K: 32.7 nW	10 K: 41.8 mV	1.1–1.5 mm	—	—
Bi2Te3/CF49	2.5–3.75	12 pairs	15 K: 0.2 μW	15 K: 2 mV	30 μm	4 mm	100 cycles/6%
Bi2Te3 (n-type) and Bi0.5Sb1.5Te3 (p-type) NWs50	1.8	5 pairs	32.5 K: 127 nW	32.5 K: 45 mV	0.62–0.89 μm	11 mm	50 cycles/2.5%
SWCNT/PEDOT:PSS coated Te nanorod51	1.04	6	44 K: 53.6 nW	44 K: 5.6 mV	10 μm	—	—
Bi2Se0.3Te2.7 (n-type) and Bi0.5Sb1.5Te3 (p-type)/paper composite52	Bi2Se0.3Te2.7: 0.44	10 p–n couples	35 K: 10 nW	35 K: 8 mV	200 μm	20 mm	1000 cycles/<5%
	Bi0.5Sb1.5Te3: 0.11
BiSbTe films with 8 wt% Te53	3	4	80 K: 54 μW	80 K: 64 mV	27 μm	10 mm	1000 cycles/3%
Bi2Te3-based inorganic paints54		5 couples	50 K: 60.7 μW	50 K: 79.4 mV	50 μm	—	—
Bi2Te3-based inks55	—	—	39 K: 1.62 mW	39 K: 27 mV	1.5–2.0 mm	—	—