Summary of the detailed growth parameters and performance of single-crystal graphene.
| Gas flow (sccm) | Press. | Temp. (°C) | Time (min) | Alignment | Size | Performance | Ref. | |
|---|---|---|---|---|---|---|---|---|
| Electrical mobility (cm2 V−1 s−1) | Sheet resistance (Ω sq−1) | |||||||
| CH4: 3 H2: 50 H2/CH4: 1600 Ar: 1000 | AP | 1075 | 60 | 98% | 6 × 3 cm 2 | 6100 (average) | __ | 18 |
| CH4: 1–5 H2: 500 Ar: 100 | AP | 1030 | 20 | >99% | 5 × 50 cm 2 | 23 000 (4 K) 15 000 (RT) | 230 | 36 |
| CH4: 6 H2 Ar | 26 Torr | 1030 | 90 | 95% | __ | __ | __ | 43 |
| CH4: 2–3 H2: 100 Ar: 300 | AP | 1070 | __ | 99% | 2 inches | 11 500 | 315 | 44 |
| CH4: 15 H2: 25 Ar: 500 | AP | 1050 | 360 | 100% | __ | 17 000 | __ | 45 |
| CH4: 20 H2: 10 Ar: 300 | AP | 1060 | 40 | 98% | Centimeter scale | __ | 270 ± 30 | 47 |
| CH4: 0.5–2.0 H2: 100–200 | 2 Torr | 1060 | __ | 100% | __ | 10 000 | __ | 48 |
| CH4: 30 H2: 30 | 30 Torr | |||||||
| CH4: 0.5–3 | AP | 1035 | 5–20 | 100% | 6 × 6 cm2 square arrays | __ | __ | 37 |
| CH4: 0.5 H2: 10 Ar: 500 | AP | 1010 | 10–30 | __ | __ | __ | __ | 49 |
| CH4 H2 | 100 Torr | 900–930 | 5–120 | 100% | 5.08 cm | 10 620 (max. value) | __ | 33 |
| CH4: 4.6 H2: 100 Ar: 200 | AP | 910 | 90 | ∼90% | Hundred nanometers | __ | __ | 61 |
| CH4: 0.7 H2: 40 Ar: 220 | AP | 916 | 105 | 98% | 400–500 nm | __ | __ | 62 |
| CH4 H2 Ar | AP | 916 | 600 | 100% | 4 inches | >20 000 (over 70% area) | __ | 63 |
| C3H6 | 1.0 × 10−6 mbar | 600–680 | 5 | 100% | __ | __ | __ | 68 |
| CH4: 50 H2: 10 Ar: 300 | AP | 750 | 60 | 100% | 6 inches | 9700 (RT) | __ | 64 |
| CH4 (1% CH4 diluted in Ar) | AP | 1075 | 5 | ≥98% | __ | 11 129 (max.) 5273 (average) | 650 | 70 |