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. 2021 Oct 29;3(23):6545–6567. doi: 10.1039/d1na00545f

Dealing process of substrates for the growth of single-crystal graphene.

Substrate Methods Annealing Ref.
Gas flow (sccm) Press. Temp. (°C) Time
Cu (111) Repeated chemical mechanical polish and anneal Ar: 1000 H2: 500 AP 1075 2 h 18
Temperature-gradient-driven annealing technique Ar: 500 AP 1030 __ 36
Anneal for a long time Ar H2: 100 26 Torr 1030 12 h 43
Heat Cu foil at 1085 °C in 60 min and anneal it under H2 atmosphere on Mo foil Ar: 300 H2: 100 AP 1085 3 min 44
Make copper foil into a hole-pocket shape Ar: 500 H2: 25 AP 1050 40 min 45
Pre-introduce Cu oxide layer (heat at 200–350 °C for 10–30 min in air) and anneal Ar: 1000 AP 1060 70 min 47
Anneal Ar: 50 H2: 50 760 Torr 1060 18 h 48
Cu (100) Monocrystallize Cu foil via oxygen chemisorption-induced reconstruction __ 1 Pa 1035 0.5–1 h 37
High-index Cu facets (i) Pre-oxidation polycrystalline Cu foil in air at 150–650 °C for 1–4 h Ar: 800 H2: 50 AP 1020 3–10 h 49
(ii) Anneal
Ge (110) Epitaxially grow H-terminated Ge surface on the Si substrate by introducing GeH4 gas as a precursor __ __ 600 30 min 33
Ge (001) Create the Ge (001) surface with a 9° miscut and anneal H2: 100 Ar: 200 AP 910 30 min 61
Create Ge (001) surface with a 12° miscut __ AP __ __ 62
Create Ge (001) surface with a 15° miscut H2, Ar __ 916 1 h 63
Ni (111)/MgO (i) Deposit the 50 nm thick Ni film on MgO at 300 °C __ UHV 700–800 __ 68
(ii) Deposit the 100 nm thick Ni film on top of the first layer at 600 °C
(iii) Anneal
(iv) Clean the Ni film with Ar+ sputtering and anneal
Cu/Ni (111) (i) Sputter the Cu/Ni alloy on sapphire with the Cu85Ni15 alloy target Ar: 300 H2: 20 AP 750 1 h 64
(ii) Anneal
(i) Anneal Cu foil (i) Ar: 10 H2: 10 AP 1050 12 h 70
(ii) Deposit the Ni layer on the Cu foil and anneal (ii) Ar: 20 H2: 20 AP 1050 4–6 h