Cu (111) |
Repeated chemical mechanical polish and anneal |
Ar: 1000 H2: 500 |
AP |
1075 |
2 h |
18
|
Temperature-gradient-driven annealing technique |
Ar: 500 |
AP |
1030 |
__ |
36
|
Anneal for a long time |
Ar H2: 100 |
26 Torr |
1030 |
12 h |
43
|
Heat Cu foil at 1085 °C in 60 min and anneal it under H2 atmosphere on Mo foil |
Ar: 300 H2: 100 |
AP |
1085 |
3 min |
44
|
Make copper foil into a hole-pocket shape |
Ar: 500 H2: 25 |
AP |
1050 |
40 min |
45
|
Pre-introduce Cu oxide layer (heat at 200–350 °C for 10–30 min in air) and anneal |
Ar: 1000 |
AP |
1060 |
70 min |
47
|
Anneal |
Ar: 50 H2: 50 |
760 Torr |
1060 |
18 h |
48
|
Cu (100) |
Monocrystallize Cu foil via oxygen chemisorption-induced reconstruction |
__ |
1 Pa |
1035 |
0.5–1 h |
37
|
High-index Cu facets |
(i) Pre-oxidation polycrystalline Cu foil in air at 150–650 °C for 1–4 h |
Ar: 800 H2: 50 |
AP |
1020 |
3–10 h |
49
|
(ii) Anneal |
Ge (110) |
Epitaxially grow H-terminated Ge surface on the Si substrate by introducing GeH4 gas as a precursor |
__ |
__ |
600 |
30 min |
33
|
Ge (001) |
Create the Ge (001) surface with a 9° miscut and anneal |
H2: 100 Ar: 200 |
AP |
910 |
30 min |
61
|
Create Ge (001) surface with a 12° miscut |
__ |
AP |
__ |
__ |
62
|
Create Ge (001) surface with a 15° miscut |
H2, Ar |
__ |
916 |
1 h |
63
|
Ni (111)/MgO |
(i) Deposit the 50 nm thick Ni film on MgO at 300 °C |
__ |
UHV |
700–800 |
__ |
68
|
(ii) Deposit the 100 nm thick Ni film on top of the first layer at 600 °C |
(iii) Anneal |
(iv) Clean the Ni film with Ar+ sputtering and anneal |
Cu/Ni (111) |
(i) Sputter the Cu/Ni alloy on sapphire with the Cu85Ni15 alloy target |
Ar: 300 H2: 20 |
AP |
750 |
1 h |
64
|
(ii) Anneal |
(i) Anneal Cu foil |
(i) Ar: 10 H2: 10 |
AP |
1050 |
12 h |
70
|
(ii) Deposit the Ni layer on the Cu foil and anneal |
(ii) Ar: 20 H2: 20 |
AP |
1050 |
4–6 h |