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. 2019 Jan 1;1(3):1148–1154. doi: 10.1039/c8na00101d

Fig. 2. Scanning electron micrographs (SEM) of CNT-M microcantilevers. (a) a microcantilever extending from a larger base with the entire device resting on a silicon substrate, (b) microcantilever top surface, and (c) microcantilever side wall. (d) an SEM image of a CNT-M microcantilever that was cross sectioned by focused ion beam (FIB) prior to imaging. The samples in (a), (b), and (d) were infiltrated for 2 minutes, and (c) for 4 minutes.

Fig. 2