Fig. 4. Optimization of the p-cSi layer: (a) and (b) acceptor concentration N_A (cm⁻³), (c) and (d) effective conduction band and valance band density N_C/N_V (cm⁻³), (e) and (f) thickness (μm), (g) and (h) number of layers of MoS₂ and (i) and (j) layer thickness of a-Si:H(i). The optimized parameters of a-Si:H(i) were maintained as: thickness = 3 nm, E_g = 1.6 eV, and the parameters for n-MoS₂ were maintained as: N_D = 10¹⁸ cm⁻³, N_C/N_V = 3 × 10²⁰ cm⁻³, number of layers = 3, E_g = 1.47 eV, χ = 4.1 eV and ε_r = 6.