| Thickness |
3L–6L (1L = 0.65 nm) |
3–10 nm |
50–500 μm |
| Dielectric constant (εr) |
4–14 |
11.9 |
11.9 |
| Electron affinity χ (eV) |
3.74–4.45 |
3.9 |
4.05 |
| Band gap, Eg (eV) |
1.41–1.48 |
1.6–2.0 |
1.12 |
| Effective conduction band density, NC (cm−3) |
3 × 1018 to 9 × 1020
|
2.5 × 1020
|
3 × 1019 to 1 × 1021
|
| Effective valence band density, NV (cm−3) |
3 × 1018 to 9 × 1020
|
2.5 × 1020
|
3 × 1019 to 1 × 1021
|
| Effective electron mobility, μn (cm2 V−1 s−1) |
517 |
20 |
1104 |
| Effective hole mobility, μp (cm2 V−1 s−1) |
8.5 |
5 |
420 |
| Acceptor concentration NA (cm−3) |
0 |
0 |
1015 to 1017
|
| Donor concentration ND (cm−3) |
1012 to 1018
|
0 |
0 |
| Electron thermal velocity, Ve (cm s−1) |
107
|
107
|
107
|
| Hole thermal velocity, Vh (cm s−1) |
107
|
107
|
107
|
| Layer density, (g cm−1) |
5.06 |
2.328 |
2.328 |
| Auger electron recombination coefficient, (cm6 s−1) |
∼10−24
|
0 |
2.2 × 10−31
|
| Auger hole recombination coefficient, (cm6 s−1) |
∼10−24
|
0 |
9.9 × 10−32
|
| Band-to-band recombination coefficient, (cm3 s−1) |
∼10−7
|
0 |
9.5 × 10−15
|
| Defect type |
Single |
Conduction tail |
Single |
| Defect charge |
Acceptor |
Acceptor |
Acceptor |
| Total defect density (cm−3) |
1018
|
6.4 × 1019
|
1010
|
| Specific defect density (cm−3 eV−1) |
1018
|
1.83 × 1021
|
1010
|
| Defect level energy (eV) |
0.6 |
0.035 (Urbach) |
0.56 |
| Electron and hole capture cross section (cm−2) |
10−14 (default) |
7 × 10−16
|
10−14
|
| Optical properties |
n = 4.47; k = 1.01 |
a-Si nk (default) |
c-Si nk (default) |
