Fig. 13. 2T2R TMD-TCAM and 1T1R component with MoS2-FET. (a) 3D schematic illustration of the 2T2R TCAM cell, with two MoS2 FETs and two HfOx-based RRAMs. (b) Top-view optical image of the 2T2R TCAM cell 1. Scale bar: 50 μm. (c) Circuit diagram of the 2T2R TCAM cell showing the definition of match and mismatch states, with the stored data bit ‘1’. (d) 3D schematic of the 1T1R structure, as a component of the 2T2R TCAM cell. (e) Circuit diagram of the 1T1R structure. Measured representative Id − VTG-S (f) and Id − Vds (g) characteristics of the top-gated monolayer MoS2-FET with 25 nm HfOx as the gate dielectric, with W = 50 μm, L = 0.8 μm, measured at VBG = 0 V and with the source grounded.112 Reproduced with permission from ref. 112, copyright 2019 Springer Nature.
