Performance parameters of 2D MoS₂-FETs based on wafer-scale MoS₂ films.

MoS2	Configurations	Dielectrics	L (μm)	μ FE (cm2 V−1 s−1)	I on/Ioff ratio	SS (mV dec−1)	Ref.
Monolayer on sapphire by CVD	Top-gated	HfO2	3.5	0.1–3	>106	130	8
4-Inch monolayer by CVD	ITO back-gated	Al2O3	6	∼55	1010		13
Few-layer by exfoliation	Back-gated	SiO2	2	167 ± 20			14
8-Inch monolayer by MOCVD	Back-gated	SiO2	10	0.47	5.4 × 104		18
4 inch-scale by MOCVD	Back-gated	SiO2		7–12	104–107		21
6-Inch monolayer by CVD	Back-gated	SiO2	1	6.3–11.4	105–106		24
Monolayer by Au-assisted exfoliation	Top-gated	SiO2		22.1–32.7	∼107	100	30
2-Inch monolayer by CVD	Back-gated	SiO2	30–60	∼40	∼106		31
2-Inch continuous by CVD	Top-gated	HfO2	10–100	70	107	150	32
4-Inch monolayers by CVD	Back-gated	SiO2	10	∼70	∼109		33
Monolayer by APCVD	Back-gated	Al2O3		0.033	5.8 × 105		34
Wafer-scale monolayer by CVD	Back-gated	SiO2	20	1.2			35
Monolayers on Au by CVD	Back-gated	SiO2	5	∼11.2	7.7 × 105		37
Continuous monolayer by CVD	Back-gated	SiO2	1	∼9.8	3.1 × 106		40
2-Inch by PLD and sulfurization	Top-gated	HfO2	90	8.85	∼105		50
Monolayer by MOCVD	Back-gated	SiO2	10	21.6			51
Monolayer on 2-inch sapphire	Top-gated	Al2O3	15	∼0.76	∼104		52
3.5 × 3.5 cm2 monolayer by CVD	Back-gated	SiO2	20	1.3 × 10−2	∼104	8300	55
2-Inch monolayer by MOCVD	Back-gated	SiO2	10	21.6			56
Monolayer by MOCVD	Ti/Au back-gated	Al2O3	10	3.4 ± 0.3	107		57
Monolayers by VLS	Back-gated	SiO2		21.1	107–109		59
1.5 × 1.5 cm2 monolayer by VLS	Back-gated	SiO2	1.48	33	>108	980	60
Few-layer on sapphire by ALD	Top-gated	Al2O3	25	0.56	106		68
Continuous monolayer by CVD	Top-gated	Al2O3		6.44	>108		76
10 × 10 mm2 monolayer by CVD	Back-gated	HfO2	6	118	108		77
Monolayer and bilayer by CVD	Dual-gated	Y2O3/HfO2	10	1–9	>106		90
Monolayer by CVD	Back-gated	SiO2		2.87	3.2 × 106		96
Bilayer by CVD	Dual-gated	HfO2	10	32.5		∼800	99