Fig. 5. FDTD calculated optical absorption in the MoS2 monolayers (A) on the NP and flat regions formed in (a) 100 and (b) 320 nm-SiO2/Si wafers. For comparison, A of non-patterned 100 and 320 nm-SiO2/Si wafers are also included: 100 nm in a and 320 nm in (b). A on the NP regions was also estimated using the EMA method, as indicated as NPEMA in (a and b).
