Fig. 3. Anomalous Nernst effect and anomalous Hall effect from edge and bulk channels of ML-WTe₂/Cr₂Ge₂Te₆.

a Schematic diagram of device structure. Electrodes on the left side probe combined edge and bulk signal of ML-WTe₂, and those on the right side are partly covered with BN to prevent edge contact with ML-WTe₂, thus only detect the bulk ANE. b Optical image of device D7 prior to transfer of ML-WTe₂/Cr₂Ge₂Te₆ composite layer. The ML-WTe₂ flake is indicated by the purple dashed polygon. Electrodes from 11 to14 probe the ANE signal from both edge and bulk, and electrodes from 3 to 6 probe the bulk-only ANE signal. The scale bar is 10 $\mu m$. c Temperature dependence of resistance from 5–6 (Bulk) and 13-14 (Bulk + Edge). d, e ANE signals from 13–14 (d) and 5–6 (e) at selected temperatures. For T_s < 20 K, 40 loops are used for averaging; for T_s > 20 K, 20 loops are used for averaging. f, g 2 f current response from Bulk + Edge (11–14 and 11–12) and Bulk-only (5–6 and 5-4) channels to AC voltage applied between the two outermost horizontal electrodes on ML-WTe₂ vs. H_z at T_s = 4 K (f) and 14 K (g). 60 loops are used for averaging in f, and 10 loops for other curves than the 11–14 electrodes (3 loops) in g, respectively. The rms magnitudes of the AC voltage for 4 K and 14 K measurements are 20 and 200 mV, respectively.