Figure 3.

Characterization of photoresponse of printed photodetectors. A‐C) Sensitivity of photodetectors with varying active materials at a bias voltage of −1 V and wavelengths of A) 310 nm, B) 360 nm, and C) 520 nm, respectively (n = 3). The insets are current‐intensity characteristics of PD2. D‐F) Responsivity, external quantum efficiencies (EQE), and detectivity, respectively, at a bias voltage of ‐1 V of the photodetectors printed with the various active materials (n = 3). Data are presented as mean ± SD.