Figure 1.

(a) Layout design of a SiC power MOSFET with ${\mathrm{P}}^{+}$ located periodically in the center of P-well stripe; (b) A-A′ cross-sectional view showing both ${\mathrm{P}}^{+}$ and ${\mathrm{N}}^{+}$; (c) B-B′ cross-sectional view showing extended ${\mathrm{N}}^{+}$ source; (d) cross-sectional view of the edge termination of the fabricated 650$\mathrm{V}$ SiC power MOSFETs.