Figure 3.

(a) Measured transfer characteristics of the packaged 650$\mathrm{V}$ SiC MOSFETs on wafer 1 and (b) ${\mathrm{V}}_{\mathrm{th}}$ variation as a function of $\frac{1}{2}{\mathrm{W}}_{\mathrm{JFET}}$ for MOSFETs on wafers 1 and 2.