Figure 6.

(a) Measured device capacitances vs. drain voltage at 100 $\mathrm{k}$$\mathrm{Hz}$ of the SiC MOSFETs on wafer 1, (b) ${\mathrm{C}}_{\mathrm{gd}}$, (c) ${\mathrm{C}}_{\mathrm{ds}}$, and (d) ${\mathrm{C}}_{\mathrm{gs}}$ variation as a function of $\frac{1}{2}{\mathrm{W}}_{\mathrm{JFET}}$ for MOSFETs on wafers 1 and 2.