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. 2022 Aug 24;14(35):39976–39984. doi: 10.1021/acsami.2c09426

Figure 4.

Figure 4

Mapping carrier transport inside the stressed CdSeTe/CdTe device, with an electron beam fixed in a line scan to excite carriers in different regions, its corresponding transport imaging, and a representative line profile marked in green line (not to scale). (a) Excitation in the CdTe layer; (b) excitation in the CdSeTe intermixture region; (c) excitation in the CdSeTe intermixture region, closer to CdSeTe; and (d) excitation in the CdSeTe layer.