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. 2022 Aug 24;14(35):39976–39984. doi: 10.1021/acsami.2c09426

Figure 6.

Figure 6

Device modeling results. (a) 3D rendering of 2D TI simulation showing the e–h pair generation rate at the electron beam location d = 1.4 μm (excitation in MZO and SnO2 not shown); (b) CdSeTe band-gap smoothing variations; (c) simulated JV curves and comparison with experimental data for a typical device; and (d–f) radiative recombination rate profiles with electron beam excitation at different locations relative to the distance to back-contact.