Fig. 1. (a) Setup used to deposit Sn on multilayer hBN at high temperatures. (b) AFM image of a multilayer hBN on SiO2 before the annealing. AFM height (c) and phase (d) images of the hBN after annealing with Sn vapor at 1000 °C for 30 min. (e) AFM height image (upper panel) and the height profile of the corresponding nanoplate and nanotrench (lower panel).
