Figure 1.

Oxidized WSe₂ with e‐beam irradiation. a) Schematic of oxidized WSe₂ sample used for optical measurements to probe the doping effect of e‐beam irradiation. b) Raman spectra of the oxidized WSe₂ before and after e‐beam irradiation. c) PL intensity mapping at 760 nm (≈1.64 eV) displays a neutral exciton of e‐beam irradiated and non‐irradiated oxidized WSe₂. d) Optical image of seamless junction diode made of oxidized WSe₂ patterned by e‐beam irradiation. e) V _OC at various V _GS measured from the seamless junction diode (measured between electrodes 2 and 3). The inset shows output curves at different V _GS under laser illumination with a power of 0.35 µW, wherein the curves indicate the V _OC modulation in photovoltaic effect. f) Band alignment of the p⁺–p WSe₂ homojunction at V _GS = (−50 and −20) V.