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. 2022 Sep 15;13:5410. doi: 10.1038/s41467-022-33135-w

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© The Author(s) 2022

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 3 — a Transfer characteristics comparison of two typical Hall-bar devices fabricated with PMMA- and GSE-transferred graphene. Inset: image of graphene Hall-bar device on SiO₂/Si. b Histograms of FET mobility of GSE- and PMMA-transferred graphene. The average mobility of 42 GSE-transferred and 18 PMMA-transferred graphene devices are 6000 cm² V⁻¹ s⁻¹ and 2000 cm² V⁻¹ s⁻¹, respectively. c The change in Hall resistance as a function of magnetic field of GSE-transferred graphene on SiO₂/Si at different temperature. Inset: image of graphene Hall-bar device on SiO₂/Si. d The fabrication scheme of h-BN-encapsulated transferred graphene. e The change in Hall resistance as a function of magnetic field (B) of h-BN-encapsulated transferred graphene at 300 K. Inset: image of h-BN encapsulated graphene Hall-bar device. f The variation in Hall resistance (R_xy) (left axis) and longitudinal resistance (R_xx) (right axis) as a function of B at 1.7 K. g R_xx (left axis) and R_xy (right axis) as a function of the back gate (V_g) at 1.7 K and 8.5 T. h 2D contour plot of R_xx as a function of B and V_g. The dash black lines show LLs at filling factors ν = ±2, ±6, and ±10, as well as some new emerging fractional filling factors ν = 2/3, ±4/3, 7/3, ±8/3…, due to the degeneracy lifting of LLs.