| APD |
Avalanche Photodiode (or ~Detector) |
| BERT |
Bit Error Ratio Tester |
| BGL |
Background Light |
| FoV |
Field-of-View |
| InGaAs |
Indium Gallium Arsenide semiconductor |
| IM/DD |
Intensity Modulation/Direct Detection |
| IRT |
Index-of-Refraction Turbulence |
| LEO |
Low Earth Orbit |
| LP |
Low Pass, or reception filter (between TIA and limiter) |
| OOK |
On/Off-Keying modulation |
| PRBS |
Pseudo-random bit sequence |
| Ppb |
Photons per symbol-bit |
| RFE |
Receiver front-end |
| RSSI |
Received signal strength indicator |
| SNL |
Shot Noise Limited |
| SNR |
Signal-to-noise ratio |
| TIA |
Trans-impedance amplifier |
| TNL |
Thermal Noise Limited |
|
B
|
Bandwidth, e.g., of the RFEs reception filter |
|
c
|
Speed of light in vacuum (2.998 × 108 m/s) |
|
FA
|
Excess noise factor of an APD |
|
Fn
|
Amplifier noise figure |
|
h
|
Planck constant (6.626 × 10−34 Ws2) |
|
it
|
Thermal noise current density from amplifier |
|
Id
|
Dark current of a photodiode |
|
Idm
|
Part of dark current that will get multiplied with M
|
|
Idu
|
Part of dark current that will not get multiplied |
|
kA
|
Ionization coefficient ratio of electrons vs. holes |
|
kB
|
Boltzmann constant |
|
Le,Ω,λ
|
Spectral irradiance (typically per nm wavelength) |
|
M
|
Multiplication factor |
|
Mopt
|
optimum multiplication factor |
|
|
Mean number of photons per bit |
|
|
Mean received optical power |
|
|
Background light power seen by the APD area |
|
pBE
|
Probability of bit error |
| Q |
Receiver quality factor |
|
q
|
Elementary charge (1.6022 × 10−19 As) |
|
R
|
Unmultiplied detector responsivity |
|
RTI
|
Transimpedance resistor |
|
r
|
Data rate = ½ B
|
|
T
|
Temperature |
|
UBD
|
Breakdown voltage of APD |
|
UR
|
Reverse voltage applied to APD |
|
|
Peak signal value (e.g., pulse amplitude) |
|
|
Mean value of a binary symbol sequence |