Figure 1.

Full-inorganic Ag₂S flexible memristor. (a) Schematic illustration of FM structure. The device consists of a silver top electrode (Ag TE), 5 nm thick HfO₂ dielectric layer (through which 100 nm contact holes are etched), 100 μm thick Ag₂S electrolyte, and silver bottom electrode (Ag BE). The photography in the lower left shows the bended Ag₂S FMs. (b) Current (I)–voltage (V) characteristics of FM under 0 V → −0.5 V → 0.5 V → 0 V voltages applied to the Ag TE.²³ The inset shows resistance reduction under negative setting bias, where interface RS (setting bias < −0.4 V) is observed before filament formation. Device set by −0.5 V bias is marked by stage I in the curve. (c) I–V characteristics of FM under 0 V → −0.2 V → 0.2 V → 0 V voltages applied to the Ag TE. As schematically illustrated, the device is set by the Ag⁺ ion accumulation induced SBH reduction and reset by the Ag⁺ ion depletion induced SBH increase at the top contact interface. Device set by −0.2 V bias is marked by stage II in the curve. (d) Device resistance evolution under temperature variations. Different resistance–temperature dependences indicate filament RS for stage I and interface RS for stage II. The inset shows an exponential relationship between device resistance (at stage II) and temperature.