Figure 2.

Endurance and retention of interface RS. (a) Recorded current (with high temporal resolution) under pulsed voltage stresses of 5 cycles. The red points illustrate the two data points recorded in each cycle in the following low temporal resolution measurements. (b) ON/OFF states conductance of a Ag₂S-based memristor recorded for 10⁵ repeating cycles. The reading voltage is ±5 mV as marked in panel a, and the data are collected for each switching cycle. (c) Cumulative probability of ON/OFF states conductance in 10⁵ endurance cycles. (d) ON/OFF states conductance of 10 Ag₂S-based memristors. The conductance is collected every 10 switching cycles. (e) Cumulative probability of the averaged ON/OFF states conductance and switching ratio of the 10 devices. The ON/OFF states conductance of each device is averaged from 10⁵ endurance cycles. (f) Data retention of ON and OFF conductance recorded under bending condition (with 3 mm curvature radius).